Electrical Characterization of MEPA-MOCVD grown InN
The electrical characterization of migration enhanced, plasma assisted metal-organic chemical vapor deposition (MEPA-MOCVD) grown Indium Nitride (InN) has been started (Cross et al., (536) 2020, J. Crystal Growth). Work still needs to be done to understand the method of conductivity in the InN. Preliminary capacitance and inductance measurements were made, but only for a single sample. A broad group of samples will need to be explored to determine the methods of conduction present and to better understand the material deposited. This is a small component of the characterization of these materials and exploration of this sample set.